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  14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 1 HMC197A / 197ae gaas mmic sot26 spdt sw itc h , dc - 3 g h z v02.1210 general description features functional diagram low i nsertion loss: 0.4 db ultra small package: so t 26 i nput i p3: +45 dbm positive c ontrol: 0/+3v @ 3 a electrical specifcations, t a = +25 c, vctl = 0/+3 to +8 vdc, 50 ohm system typical applications t he h m c 197a( e ) is ideal for: ? mmds & w irelesslan ? p c m ci a w ireless c ards ? portable w ireless t he h m c 197a( e ) is a low-cost spd t switch in a 6-lead so t 26 plastic package for use in general switching applications which require very low insertion loss and very small size. t he device can control sig- nals from d c to 3 g h z and is especially suited for 900 m h z, 1.8 - 2.2 g h z, and 2.4 g h z i sm applica- tions with less than 1 db loss. t he design provides exceptional insertion loss performance, ideal for flter and receiver switching. rf1 and rf2 are refective shorts when off. t he two control voltages require a minimal amount of d c current and offer compatibility with most c mos & tt l logic families. see h m c 221a( e ) for same performance in an alternate so t 26 pin-out. parameter frequency min. t yp. max. units i nsertion loss d c - 1.0 g h z d c - 2.0 g h z d c - 2.5 g h z d c - 3.0 g h z 0.4 0.45 0.7 0.8 0.7 0.8 0.9 1.1 db db db db i solation d c - 1.0 g h z d c - 2.0 g h z d c - 2.5 g h z d c - 3.0 g h z 24 24 18 14 28 28 22 18 db db db db return loss d c - 1.0 g h z d c - 2.0 g h z d c - 2.5 g h z d c - 3.0 g h z 20 16 14 10 30 22 17 13 db db db db i nput power for 1db c ompression (vctl = 0/+5v) 0.5 - 1.0 g h z 0.5 - 3.0 g h z 25 23 30 29 dbm dbm i nput t hird order i ntercept (vctl = 0/+5v) ( t wo-tone i nput power = +7 dbm e ach t one) 0.5 - 1.0 g h z 0.5 - 3.0 g h z 40 38 45 43 dbm dbm switching c haracteristics d c - 3.0 g h z tr i s e , tfall (10/90% rf) ton, toff (50% ct l to 10/90% rf) 3 10 ns ns
14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 2 HMC197A / 197ae insertion loss v02.1210 isolation return loss gaas mmic sot26 spdt sw itc h , dc - 3 g h z input 0.1 and 1.0 db compression vs. control voltage input third order intercept point vs. control voltage -3 -2.5 -2 -1.5 -1 -0.5 0 0 0.5 1 1.5 2 2.5 3 insertion loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 return loss (db) frequency (ghz) 44 46 48 50 52 54 2 3 4 5 6 7 8 9 900 mhz 1900 mhz ip3 (dbm) control input (v) 15 20 25 30 35 3 4 5 6 7 8 9 p1db & p0.1db (dbm) control input (v) 1 db at 1900 mhz 1 db at 900 mhz 0.1 db at 1900 mhz 0.1 db at 900 mhz -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 isolation (db) frequency (ghz) distortion vs. control voltage truth table *control input voltage tolerances are 0.2 vdc. c ontrol i nput t hird order i ntercept (dbm) +7 dbm e ach t one (vdc) 900 m h z 1900 m h z +3 50 49 +5 50 49 +8 51 50 c ontrol i nput* c ontrol c urrent signal path state a (vdc) b (vdc) i a (a) i b (a) rf to rf1 rf to rf2 0 +3 -3 3 on off +3 0 3 -3 off on 0 +5 -5 5 on off +5 0 5 -5 off on 0 +8 -32 32 on off +8 0 32 -32 off on
14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 3 compression vs. control voltage c aution: do not operate in 1db compression at power levels above +31 dbm (vctl = +5 vdc) and do not hot switch power levels greater than +20 dbm (vctl = +5vdc). d c blocks are required at ports rf c , rf1 and rf2. c arrier at 900 m h z c arrier at 1900 m h z c ontrol i nput i nput power for 0.1 db c ompression i nput power for 1.0 db c ompression i nput power for 0.1 db c ompression i nput power for 1.0 db c ompression (vdc) (dbm) (dbm) (dbm) (dbm) +3 21 24 21 24 +5 28 30 27 30 +8 32 34 31 33 HMC197A / 197ae v02.1210 gaas mmic sot26 spdt sw itc h , dc - 3 g h z absolute maximum ratings outline drawing c ontrol voltage range (a & b) -0.2 to +12 vdc storage t emperature -65 to +150 c operating t emperature -40 to +85 c e sd sensitivity ( h bm) c lass 1a e l ect ros t a tic s e ns iti v e de v ice obs e rv e h andl i ng pr ec au ti ons part number package body material lead finish msl rating package marking [3] h m c 197a low stress i njection molded plastic sn/pb solder msl1 [1] 197a xxxx h m c 197a e ro h s-compliant low stress i njection molded plastic 100% matte sn msl1 [2] 197a e xxxx [1] max peak refow temperature of 235 c [2] max peak refow temperature of 260 c [3] 4-digit lot number xxxx package information no tes: 1. leadframe ma teri al: coppe r alloy 2. dimensi ons are in inches [millimete rs]. 3. dimension does no t include moldflash of 0.15mm per side. 4. dimension does no t include moldflash of 0.25mm per side. 5. all ground l eads mus t be soldered t o pc b rf ground.
14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 4 HMC197A / 197ae v02.1210 gaas mmic sot26 spdt sw itc h , dc - 3 g h z typical application circuit notes: 1. set logic gate and switch vdd = +3v to +5v and use hct series logic to provide a tt l driver interface. 2. c ontrol inputs a/b can be driven directly with c mos logic ( hc ) with vdd of 5 to 8 volts applied to the c mos logic gates. 3. d c blocking capacitors are required for each rf port as shown. c apacitor value determines lowest frequency of operation. 4. h ighest rf signal power capability is achieved with vdd = +8v and a/b set to 0/+8v. evaluation circuit board t he circuit board used in the fnal application should be generated with proper rf circuit design tech - niques. signal lines at the rf port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. t he eval - uation circuit board shown above is available from h ittite microwave c orporation upon request. list of materials for evaluation pcb 101674 [1] i tem description j1 - j3 p c b mount sma rf c onnector j4 - j6 d c pin c 1 - c 3 330 pf c apacitor, 0603 pkg. u1 h m c 197a / h m c 197a e spd t switch p c b [2] 101658 e valuation p c b [1] reference this number when ordering complete evaluation p c b [2] c ircuit board material: rogers 4350


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